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Symposium : Spintronics in semiconductors, 2D materials and topological insulators
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The symposium offers a venue for the discussion of the latest developments and research efforts related to spin-dependent phenomena in semiconductor systems. The central goal is to showcase and cross-fertilize the many branches of spintronics, providing fundamental insights on newly emerging topics and materials.

18/09/2017 to 21/09/2017
When: 18/09/2017
Where: E-MRS Fall meeting
Contact: Fabio PEZZOLI
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The spin degree of freedom can be harnessed for radically new ways of information processing and communication within a robust and scalable solid-state framework. In particular, spintronic integrated circuits of ferromagnetic metals are now reaching the market.  Semiconductors have also attracted a great deal of attention, because of prospects of implementing quantum spin manipulation with mature microelectronics technology. Devices that enable electrical control of the spin degree of freedom could seamlessly integrate logic and memory functions, thus mitigating power consumption and boosting performances. Control of single spins and of the interactions between them is one of the preferred routes towards the realization of a scalable quantum computer in a solid-state system. With this respect, a central goal of semiconductor spintronics is to understand and control the fundamental mechanisms governing coherent phenomena and spin transport. The optical accessibility of spins is a key advantage, which is expected to lead to novel concepts for devices and circuits.  Presently, a next frontier of exploration in the spintronics landscape is offered by topologically protected surface and edge states in bulk and quantum wells of narrow-gap semiconductors and semimetals, respectively. Similarly, atomically-thin transitional metal dichalcogenides and related systems are coming under the spotlight because of novel and intriguing phenomena such as spin-momentum locking. The symposium will thus provide the opportunity to gather insights into theoretical and experimental advances in spin-dependent phenomena and will cover progress in the development of spintronic materials, with a special focus on semiconductors and topological materials. The aim is to foster a discussion about emerging systems and stimulate future research directions heading to the horizon of solutions and know- how having immediate repercussions on societal concerns ranging from security to energy efficiency.

Hot topics to be covered by the symposium:

Semiconductor-based architectures:  

  • Materials and methods for spin injection and detection
  • Spin confined at donors and quantum-dots
  • Spin-dependent transport in 2D electron and hole gases 
  • Spin helix states
  • Hall and Rashba spin physics
  • Spin-optoelectronics

Two dimensional materials: 

  • Growth of atomically thin semiconductors
  • Ferromagnetic contact engineering
  • Van der Waals heterojunctions
  • Spin transport
  • Spin dynamics and intervalley processes
  • Valleytronics 

Topological insulators:  

  • 3D and 2D topological insulators
  • Surface state spectroscopy 
  • Quantum spin Hall effects and helical edge states
  • Majorana fermions
  • Spin-orbit coupling
  • Topological quantum computing

List of the invited speakers (to be completed):

  • J. Fabian (Univ Regensburg)
  • K.M. Itoh (Keio Univ)
  • E. Saitoh (Tohoku Univ)
  • M. Sanquer (CEA Grenoble)
  • L. Vandersypen (TU Delft)

Scientific committee members:

  • Balocchi, INSA Toulouse (France) 
  • J. Cibert, Institut NÉEL (France) 
  • H. Dery, University of Rochester (US) 
  • M. Fanciulli, CNR and Università di Milano-Bicocca (Italy) 
  • W. Han, Beijing University (China)
  • T. Ihn, ETH Zurich (Switzerland)
  • G. Isella, Politecnico di Milano (Italy) 
  • M. Kohda, Tohoku University (Japan) 
  • P. Kossacki, University of Warsaw (Poland) 
  • S. Ryabchenko, Institute of Physics (Ukraine) 
  • D. Weiss, Universität Regensburg (Germany)
  • R. Warburton, Universität Basel (Switzerland)

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