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School : International School of Oxide Electronics 2017
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School : International School of Oxide Electronics 2017

After ISOE2011, ISOE2013 and ISOE2015, the 4th Edition of the International School of Oxide Electronics aims at gathering PhD students, post-docs, young scientists and senior researchers working in Oxide Electronics for almost two weeks in the peaceful and scenic Cargèse Scientific Institute, to build up the future Oxide Electronics scientific community.

11/04/2017 to 21/04/2017
When: 11/04/2017
Where: Cargèse Scientific Studies Institute
Menasina
Cargèse, FR -  20130
France
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Initiated by the pioneering discovery of high TC superconductors and boosted by the progress in thin film deposition techniques, the field of Oxide Electronics is growing exponentially. Major breakthroughs over the last 10 years include the advent of multiferroics and the discovery of several unexpected phases at oxide interfaces, epitomized by the high-mobility two-dimensional electron gas found at the interface between band insulators. Novel physical phenomena have been revealed in ultrathin films of ferroelectric or correlated electron systems. Giant responses and phase transitions induced by light or electric field offer potential for innovative devices.


After ISOE2011, ISOE2013 and ISOE2015, the 4th Edition of the International School of Oxide Electronics aims at gathering PhD students, post-docs, young scientists and senior researchers working in Oxide Electronics for almost two weeks in the peaceful and scenic Cargèse Scientific Institute, to build up the future Oxide Electronics scientific community.


Fundamental notions of solid-state physics (superconductivity, ferroelectricity, magnetism, first-principles calculations, optics, correlations, etc) will be developped. The school will also give an extended overview of the field, covering topics such as key advanced characterization and computational techniques, as well as multiferroics, oxide interfaces, domain walls or topogically insulating oxides. Oxide-based devices for electronics, spintronics, optics and other fields will also be presented in details.

 

Confirmed invited speakers :

  • Tamalika Banerjee (Univ. Groningen, Netherlands)
  • Agnès Barthélémy (Unité Mixte de Physique CNRS/Thales, France)
  • Albina Borisevich (Oak Ridge National Lab, USA)
  • Ralph Claessen (Univ. Wurzburg, Germany)
  • Brahim Dkhil (Ecole Centrale-Supélec, France)
  • Vincent Dusastre (Nature Materials, UK)
  • Jacky Even (INSA Rennes, France)
  • Manfred Fiebig (ETH Zürich, Switzerland)
  • Jean-Marie George (Unité Mixte de Physique CNRS/Thales, France)
  • Philippe Ghosez (Univ. Liège, Belgium)
  • Alexei Gruverman (Univ. Nebraska-Lincoln, USA)
  • Bernhard Keimer (Max Planck Institute Stuttgart, Germany)
  • Jens Kreisel (LIST, Luxembourg)
  • Philippe Lecoeur (Institut d'Electronique Fondamentale, France)
  • Marie-Aude Measson (Univ. Paris Diderot, France)
  • Christoforos Moutafis (Univ. Manchester, UK)
  • Beatriz Noheda (Univ. Groningen, Netherlands)
  • Thomas Palstra (Univ. Twente, Netherlands)
  • Ramamoorthy Ramesh (Univ. of California Berkeley, USA)
  • Jennifer Rupp (ETH Zürich, Switzerland & MIT, USA)
  • Maurizio Sacchi (Institut des NanoSciences de Paris, France)
  • Daniel Sando (University of New South Wales, Australia)
  • Jacobo Santamaria (Univ. Computense, Spain)
  • Nicola Spaldin (ETH Zürich, Switzerland)
  • Jeroen Van der Brink (IFW Dresden, Germany)
  • Michel Viret (SPEC CEA Saclay, France)
  • Pavlo Zubko (Univ. College London, UK)
Application deadline : January 2, 2017

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