Memristive phenomena combine the functionalities of electronic resistance and data memory in solid-state elements, which are able to change their resistance as a result of electrical stimulation in a non-volatile fashion. In nanoelectronics, this functionality can be used for information storage and unconventional logic, as well as neuromorphic computing concepts that are aimed at mimicking the operation of the human brain.

A multitude of fascinating memristive phenomena has emerged over the past two decades. These phenomena typically occur in oxides and higher chalcogenides and are one of the hottest topics in current solid-state research, comprising unusual phase transitions, spintronic and multiferroic tunneling effects, as well as nanoscale redox processes by local ion motion. They involve electron correlation, quantum point contact effects and exotic conformation changes at the atomic level.

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Scientific Organization
 

Prof. Dr. Rainer Waser

Forschungszentrum Jülich GmbH
Director Institute of Electronic Materials (PGI-7)
Peter Grünberg Institut
52425 Jülich, Germany

RWTH Aachen University
Institute of Materials in Electrical Engineering
and Information Technology 2 (IWE2)
52056 Aachen, Germany

Prof. Dr. Matthias Wuttig

RWTH Aachen University
Chair Experimental Physics IA and Physics Institute I
52074 Aachen, Germany

School Organization
 

Michael Beißel

Forschungszentrum Jülich
Peter Grünberg Institut / Jülich Centre for Neutron Science

Tel:    +49 2461 61-1739
Email: springschool@fz-juelich.de